The Global Gallium Nitride Semiconductor device market size is expected to reach USD 24.5 billion by 2027 at a CAGR of 5.9% during the forecast period 2020 to 2027.
The major factors that are expected to be driving the market are the vast addressable market for gallium nitride in consumer electronics and automotive, wide bandgap property of gallium nitride material encouraging innovative applications, success of gallium nitride in RF power electronics, and increasing adoption of gallium nitride RF semiconductor device in military, defense, and aerospace application.
Gallium nitride (GaN) is a semiconductor compound used to make devices that provide high output power with small physical volume, and high efficiency at ultra-high and microwave radio frequencies. Power devices are being optimized since energy saving is becoming a top priority due to the depletion of oil sources and with limited sources of energy. Two major contributors for losses in power devices are conduction losses and switching losses; however, these losses are being minimized using (GaN) gallium nitride devices which possess high breakdown voltage and low conduction resistance characteristics, thus driving its demand. Also, it has led to the growth of gallium nitride semiconductor devices especially for high efficiency power supplies in server and other IT equipment and in the rapidly expanding hybrid electric vehicles and electric vehicles. The process of manufacturing gallium nitride semiconductor devices involve growing a GaN crystal or wafer on which transistors and integrated circuits (ICs) can be fabricated.
The major driver for growth of the gallium nitride semiconductor device market includes growing demand for low costs and power consumption in consumer electronics and automotive markets, wide variety of properties associated with GaN material is encouraging innovative applications, also realization of GaN in RF Power electronics, and growing demand of gallium nitride (GaN) RF semiconductor devices especially in defense, military, and aerospace applications. However the major restraint affecting the growth of the gallium nitride semiconductor device market is high costs associated with it and growing opposition from silicon carbide (SiC) devices in high voltage semiconductor applications. Also, the growing interest in implementation of 5G infrastructure and demand for electric and hybrid vehicles globally is creating considerable opportunities for the global gallium nitride semiconductor device market.
The global gallium nitride semiconductor device market can be categorized on the basis of device type, application, wafer size, end use industry, and region. In terms of device, the market can be classified into opto-semiconductor device, power semiconductor device, RF semiconductor device and others. On the basis of wafer size, the market can be categorized into 2-Inch wafer, 4-Inch wafer, 6-Inch wafer and others. On the basis of application, the market can be categorized into power drives, light detection and ranging, radio frequency, lighting & laser and others. On the basis of end use industry, the market can be categorized into IT and telecom, industrial, automotive, military and defense, and others. On the basis of geography, the global gallium nitride semiconductor device market is segmented into North America, Europe, Asia Pacific, Middle East & Africa, and South America.
The growth of the gallium nitride semiconductor device market for opto semiconductor device type is mainly due to wide adoption in the consumer and enterprise sector, industrial, and automotive industry. Light emitting diodes (LEDs) manufactured from gallium nitride are widely being used in televisions and monitor displays, mobile displays, laptop and notebook displays, signs, projectors, and large video displays, and many more. Apart from this, LEDs manufactured from gallium nitride are also used in the automotive industry for lighting including fog lights, stop lights, car interior lighting, headlights and signal lights, dome lights, and many more.
Key Players
Major players in the global gallium nitride semiconductor device market are Efficient Power Conversion (EPC), Macom, Cree, Infineon, Northrop Grumman Corporation, Qorvo, Panasonic, Microsemi, Mitsubishi Electric, Dialog Semiconductor, Texas Instruments, Epistar, Sumitomo Electric, GaN Systems, Nichia, Samsung, and Exagan among others.
The GaN Semiconductor Devices market research report covers definition, classification, product classification, product application, development trend, product technology, competitive landscape, industrial chain structure, industry overview, national policy and planning analysis of the industry, the latest dynamic analysis, etc., and also includes major. The study includes drivers and restraints of the global market. It covers the impact of these drivers and restraints on the demand during the forecast period. The report also highlights opportunities in the market at the global level.
The report provides size (in terms of volume and value) of GaN Semiconductor Devices market for the base year 2019 and the forecast between 2020 and 2027. Market numbers have been estimated based on form and application. Market size and forecast for each application segment have been provided for the global and regional market.
This report focuses on the global GaN Semiconductor Devices market status, future forecast, growth opportunity, key market and key players. The study objectives are to present the GaN Semiconductor Devices market development in United States, Europe and China.
It is pertinent to consider that in a volatile global economy, we haven’t just conducted GaN Semiconductor Devices market forecasts in terms of CAGR, but also studied the market based on key parameters, including Year-on-Year (Y-o-Y) growth, to comprehend the certainty of the market and to find and present the lucrative opportunities in market.
In terms of production side, this report researches the GaN Semiconductor Devices capacity, production, value, ex-factory price, growth rate, market share for major manufacturers, regions (or countries) and type.
In terms of consumption side, this report focuses on the consumption of GaN Semiconductor Devices by regions (countries) and application.
Buyers of the report will have access to verified market figures, including global market size in terms of revenue and volume. As part of production analysis, the authors of the report have provided reliable estimations and calculations for global revenue and volume by Type segment of the global GaN Semiconductor Devices market. These figures have been provided in terms of both revenue and volume for the period 2016 to 2027. Additionally, the report provides accurate figures for production by region in terms of revenue as well as volume for the same period. The report also includes production capacity statistics for the same period.
With regard to production bases and technologies, the research in this report covers the production time, base distribution, technical parameters, research and development trends, technology sources, and sources of raw materials of major GaN Semiconductor Devices market companies.
Regarding the analysis of the industry chain, the research of this report covers the raw materials and equipment of GaN Semiconductor Devices market upstream, downstream customers, marketing channels, industry development trends and investment strategy recommendations. The more specific analysis also includes the main application areas of market and consumption, major regions and Consumption, major Chinese producers, distributors, raw material suppliers, equipment providers and their contact information, industry chain relationship analysis.
The research in this report also includes product parameters, production process, cost structure, and data information classified by region, technology and application. Finally, the paper model new project SWOT analysis and investment feasibility study of the case model.
Overall, this is an in-depth research report specifically for the GaN Semiconductor Devices industry. The research center uses an objective and fair way to conduct an in-depth analysis of the development trend of the industry, providing support and evidence for customer competition analysis, development planning, and investment decision-making. In the course of operation, the project has received support and assistance from technicians and marketing personnel in various links of the industry chain.
GaN Semiconductor Devices market competitive landscape provides details by competitor. Details included are company overview, company financials, revenue generated, market potential, investment in research and development, new market initiatives, global presence, production sites and facilities, production capacities, company strengths and weaknesses, product launch, product width and breadth, application dominance. The above data points provided are only related to the companies’ focus related to GaN Semiconductor Devices market.
Prominent players in the market are predicted to face tough competition from the new entrants. However, some of the key players are targeting to acquire the startup companies in order to maintain their dominance in the global market. For a detailed analysis of key companies, their strengths, weaknesses, threats, and opportunities are measured in the report by using industry-standard tools such as the SWOT analysis. Regional coverage of key companies is covered in the report to measure their dominance. Key manufacturers of GaN Semiconductor Devices market are focusing on introducing new products to meet the needs of the patrons. The feasibility of new products is also measured by using industry-standard tools.
Key companies are increasing their investments in research and development activities for the discovery of new products. There has also been a rise in the government funding for the introduction of new GaN Semiconductor Devices market. These factors have benefited the growth of the global market for GaN Semiconductor Devices. Going forward, key companies are predicted to benefit from the new product launches and the adoption of technological advancements. Technical advancements have benefited many industries and the global industry is not an exception.
New product launches and the expansion of already existing business are predicted to benefit the key players in maintaining their dominance in the global market for GaN Semiconductor Devices. The global market is segmented on the basis of region, application, en-users and product type. Based on region, the market is divided into North America, Europe, Asia-Pacific, Latin America and Middle East and Africa (MEA).
Segmentation
By Device Type
By Wafer Size
By Component
By Application
By Industry Vertical
By Region
In this study, the years considered to estimate the market size of GaN Semiconductor Devices are as follows:
Reasons to Purchase this Report:
- Market segmentation analysis including qualitative and quantitative research incorporating the impact of economic and policy aspects
- Regional and country level analysis integrating the demand and supply forces that are influencing the growth of the market.
- Market value USD Million and volume Units Million data for each segment and sub-segment
- Competitive landscape involving the market share of major players, along with the new projects and strategies adopted by players in the past five years
- Comprehensive company profiles covering the product offerings, key financial information, recent developments, SWOT analysis, and strategies employed by the major market players
Research Methodology:
In-depth interviews and discussions were conducted with several key market participants and opinion leaders to compile the research report.
This research study involved the extensive usage of both primary and secondary data sources. The research process involved the study of various factors affecting the industry, including the government policy, market environment, competitive landscape, historical data, present trends in the market, technological innovation, upcoming technologies and the technical progress in related industry, and market risks, opportunities, market barriers and challenges. The following illustrative figure shows the market research methodology applied in this report.
Market Size Estimation
Top-down and bottom-up approaches are used to estimate and validate the global market size for company, regional division, product type and application (end users).
The market estimations in this report are based on the selling price (excluding any discounts provided by the manufacturer, distributor, wholesaler or traders). Market share analysis, assigned to each of the segments and regions are achieved through product utilization rate and average selling price.
Major manufacturers & their revenues, percentage splits, market shares, growth rates and breakdowns of the product markets are determined through secondary sources and verified through the primary sources.
All possible factors that influence the markets included in this research study have been accounted for, viewed in extensive detail, verified through primary research, and analyzed to get the final quantitative and qualitative data. The market size for top-level markets and sub-segments is normalized, and the effect of inflation, economic downturns, and regulatory & policy changes or others factors are accounted for in the market forecast. This data is combined and added with detailed inputs and analysis from Vision Research Reports and presented in this report.
Market Breakdown and Data Triangulation
After complete market engineering with calculations for market statistics; market size estimations; market forecasting; market breakdown; and data triangulation. Extensive primary research was conducted to gather information and verify and validate the critical numbers arrived at. In the complete market engineering process, both top-down and bottom-up approaches were extensively used, along with several data triangulation methods, to perform market estimation and market forecasting for the overall market segments and sub-segments listed in this report.
Secondary Sources
Secondary Sources occupies approximately 25% of data sources, such as press releases, annual reports, Non-Profit organizations, industry associations, governmental agencies and customs data, and so on. This research study includes secondary sources; directories; databases such as Bloomberg Business, Wind Info, Hoovers, Factiva (Dow Jones & Company), TRADING ECONOMICS, and avention; Investing News Network; statista; Federal Reserve Economic Data; annual reports; investor presentations; and SEC filings of companies.
Primary Sources
In the primary research process, various sources from both the supply and demand sides were interviewed to obtain qualitative and quantitative information for this report. The primary sources from the supply side include product manufacturers (and their competitors), opinion leaders, industry experts, research institutions, distributors, dealer and traders, as well as the raw materials suppliers and producers, etc.
The primary sources from the demand side include industry experts such as business leaders, marketing and sales directors, technology and innovation directors, supply chain executive, end users (product buyers), and related key executives from various key companies and organizations operating in the global market.
The study objectives of this report are:
Table of Contents
1 Introduction
1.1 Objectives of the Study
1.2 Definition
1.3 Study Scope
1.3.1 Markets Covered
1.3.2 Geographic Scope
1.3.3 Years Considered for the Study
1.4 Currency
1.5 Limitations
1.6 Stakeholders
2 Research Methodology
2.1 Research Data
2.1.1 Secondary Data
2.1.1.1 Key Date From Secondary Sources
2.1.2 Primary Data
2.1.2.1 Key Date From Primary Sources
2.1.2.2 Key Industry Insights
2.1.2.3 Breakdown of Primaries
2.2 Market Size Estimation
2.2.1 Bottom-Up Approach
2.2.2 Top-Down Approach
2.3 Market Breakdown & Data Triangulation
2.4 Research Assumptions
3 Executive Summary
4 Premium Insights
4.1 Attractive Opportunities for GaN Semiconductor Device Market
4.2 GaN Device Market, By Device Type
4.3 GaN Device Market, By Wafer Size
4.4 GaN Device Market, By Component
4.5 GaN Device Market, By Application
4.6 Market, By Vertical
4.7 Market in APAC, By Vertical and By Country
4.8 Market, By Geography
5 Market Overview
5.1 Introduction
5.2 Market Dynamics
5.2.1 Drivers
5.2.1.1 Consumer Electronics and Automotive Markets to Drive GaN Power Semiconductor Revenue
5.2.1.2 Wide Bandgap Property of GaN Material Encouraging Innovative Applications
5.2.1.3 Success of GaN in Rf-Power Electronics
5.2.1.4 Increasing Adoption of GaN Rf Semiconductor Device in Military, Defense, and Aerospace Applications
5.2.2 Restraints
5.2.2.1 Competition From Sic in High-Voltage Semiconductor Applications
5.2.3 Opportunities
5.2.3.1 Potential Use of GaN in 5G Infrastructure
5.2.3.2 Applications in Electric and Hybrid Electric Vehicles
5.2.4 Challenge
5.2.4.1 High Material and Fabrication Costs
5.2.4.2 Design Challenges and Complexity for Better Efficiency
5.3 Value Chain Analysis
5.4 Supply Chain Analysis
6 GaN Semiconductor Device Market, By Device Type
6.1 Introduction
6.2 Opto-Semiconductor Device
6.3 Power Semiconductor Device
6.3.1 Discrete Power Semiconductor Device
6.3.2 Integrated Power Semiconductor Device
6.4 Rf Semiconductor Device
6.4.1 Discrete Rf Semiconductor Device
6.4.2 Integrated Rf Semiconductor Device
7 GaN Semiconductor Device Market, By Wafer Size
7.1 Introduction
7.2 2-Inch Wafer
7.3 4-Inch Wafer
7.4 6-Inch and Above Wafer
8 GaN Semiconductor Device Market, By Component
8.1 Introduction
8.2 Transistor
8.3 Diode
8.4 Rectifier
8.5 Power IC
8.6 Other
9 GaN Semiconductor Device Market, By Application
9.1 Introduction
9.2 Power Drives
9.2.1 Ev Drives
9.2.2 Industrial Drives
9.3 Light Detection and Ranging
9.3.1 Supply and Inverter
9.3.2 Switch-Mode Power Supply
9.3.3 Inverter
9.3.4 Wireless Charging
9.3.5 Ev Charging
9.4 Radio Frequency
9.4.1 Radio Frequency Front-End Module
9.4.2 Repeater/Booster/Das
9.4.3 Radar and Satellite
9.5 Lighting and Laser
10 Gallium Nitride Semiconductor Device Market, By Vertical
10.1 Introduction
10.2 Telecommunications
10.3 Industrial
10.4 Automotive
10.5 Renewables
10.6 Consumer and Enterprise
10.7 Military, Defense, and Aerospace
10.8 Medical
11 Geographic Analysis
11.1 Introduction
11.2 North America
11.2.1 US
11.2.2 Canada
11.2.3 Mexico
11.3 Europe
11.3.1 UK
11.3.2 Germany
11.3.3 France
11.3.4 Rest of Europe
11.4 APAC
11.4.1 China
11.4.2 Japan
11.4.3 South Korea
11.4.4 Rest of APAC
11.5 RoW
11.5.1 South America
11.5.2 Middle East and Africa
12 Competitive Landscape
12.1 Overview
12.2 Competitive Scenario
12.2.1 Product Launches and Developments
12.2.2 Partnerships, Contracts, Acquisitions, and Agreements
12.3 Competitive Leadership Mapping
12.3.1 Visionary Leaders
12.3.2 Dynamic Differentiators
12.3.3 Innovators
12.3.4 Emerging Companies
13 Company Profiles
(Business Overview, Products Offered, Strength of Product Portfolio, Business Strategy Excellence, Recent Developments, Key Relationships)*
13.1 Introduction
13.2 Key Players
13.2.1 Cree
13.2.2 Infineon
13.2.3 Qorvo
13.2.4 Macom
13.2.5 Microsemi
13.2.6 Mitsubishi Electric
13.2.7 Efficient Power Conversion (EPC)
13.2.8 GaN Systems
13.2.9 Nichia
13.2.10 Epistar
13.3 Key Innovators
13.3.1 Exagan
13.3.2 Visic Technologies
13.3.3 Integra Technologies
13.3.4 Transphorm
13.3.5 Navitas Semiconductor
13.4 Other Key Players
13.4.1 Samsung
13.4.2 Analog Devices
13.4.3 Panasonic
13.4.4 Texas Instruments
13.4.5 Ampleon
13.4.6 Sumitomo Electric
13.4.7 Northrop Grumman Corporation
13.4.8 Dialog Semiconductor
13.4.9 Powdec
13.4.10 Polyfet
14 Appendix
Cross-segment Market Size and Analysis for
Mentioned Segments
Additional Company Profiles (Upto 5 With No Cost)
Additional Countries (Apart From Mentioned Countries)
Country/Region-specific Report
Go To Market Strategy
Region Specific Market DynamicsRegion Level Market Share Import Export AnalysisProduction AnalysisOthers