Global GaN Semiconductor Devices Market Research Report 2018

Published Date : Mar 2019 | No. of Pages : 118 Pages | Category : Semiconductor and Electronic

In this report, the global GaN Semiconductor Devices market is valued at USD XX million in 2017 and is expected to reach USD XX million by the end of 2025, growing at a CAGR of XX% between 2017 and 2025.

Geographically, this report is segmented into several key Regions, with production, consumption, revenue (million USD), market share and growth rate of GaN Semiconductor Devices in these regions, from 2013 to 2025 (forecast), covering
United States
EU
China
Japan
South Korea
Taiwan

Global GaN Semiconductor Devices market competition by top manufacturers, with production, price, revenue (value) and market share for each manufacturer; the top players including
Avago Technologies
Toshiba
Texas Instruments
NXP Semiconductors
Aixtron SE
Fujitsu Ltd
Cree Incorporated
Infineon Technologies
Panasonic Semiconductors
Osram Opto-semiconductors
Bridgelux
Qorvo
International Rectifier Corporation
GaN Systems Incorporated
RF Micro Devices Corporation
ROHM Company Limited
Efficient Power Conservation Corporation
Freescale Semiconductor Corporation
Gallia Semiconductor
Nichia Corporation

On the basis of product, this report displays the production, revenue, price, market share and growth rate of each type, primarily split into
GaN with SiC
GaN on Sapphire
GaN on Si
GaN on AlN
Other

On the basis of the end users/applications, this report focuses on the status and outlook for major applications/end users, consumption (sales), market share and growth rate for each application, including
GaN with SiC
GaN on Sapphire
GaN on Si
GaN on AlN
Other

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