The U.S. gallium nitride semiconductor devices market size was estimated at around USD 0.73 billion in 2023 and it is projected to hit around USD 7.73 billion by 2033, growing at a CAGR of 26.62% from 2024 to 2033.
The U.S. Gallium Nitride (GaN) semiconductor devices market is experiencing significant growth and technological advancements, positioning itself as a pivotal player in the global semiconductor industry. This overview delves into the key aspects shaping the landscape of GaN semiconductor devices in the United States.
The growth of the U.S. gallium nitride (GaN) semiconductor devices market can be attributed to several key factors. Firstly, the increasing demand for GaN devices across diverse applications such as power electronics, radiofrequency (RF) devices, and optoelectronics is a significant driver. As industries like telecommunications, automotive, and consumer electronics adopt GaN technology for its high power density and thermal stability, the market experiences a surge in growth. Furthermore, ongoing technological advancements in material science and device design contribute to the improved performance and efficiency of GaN semiconductor devices. The expanding applications of GaN in emerging technologies, such as electric vehicles and 5G networks, further propel market growth. The dynamic and competitive landscape, marked by strategic collaborations and product innovations among key players, adds another dimension to the positive trajectory of the U.S. GaN semiconductor devices market.
In 2023, the opto-semiconductors segment dominated the market, contributing the highest revenue share at 41%. This dominance can be attributed to the versatile capabilities of opto-semiconductors in communication, sensing, and data transmission, driving their increased demand. The automotive sector also utilizes these semiconductors for indoor and outdoor lighting, as well as automotive lights. The ongoing expansion of 5G infrastructure presents a substantial growth opportunity, particularly in optical fibers, where opto-semiconductors facilitate high-speed data communication. GaN-based opto-semiconductors play a crucial role in devices like lasers, solar cells, LEDs, and photodiodes. GaN LEDs are recognized as a viable alternative to traditional lighting technologies, while GaN-based lasers find applications in the medical, automotive, and industrial sectors, contributing to the continued growth of this segment.
Conversely, the GaN radio frequency (RF) device segment is poised to experience the fastest Compound Annual Growth Rate (CAGR) until 2033. GaN's wide-bandgap nature endows it with exceptional electrical and physical properties, including high power density, efficiency, switching frequency, thermal conductivity, and breakdown voltage. This has resulted in widespread adoption in high-power RF applications. Beyond conventional RF uses like power amplifiers, GaN RF devices are gaining traction in military and space applications. Notably, in military radars, GaN has emerged as a preferred solution for developing solid-state transmitters across different gigahertz frequency bands, replacing traditional klystron tubes. With substantial investments in the military and defense sector, particularly in the United States, significant market growth is anticipated in this segment.
In the U.S. gallium nitride semiconductor devices market, the power IC segment has secured a significant share. GaN power ICs play a pivotal role by consolidating multiple functions in power electronics onto a single chip, enhancing reliability, speed, efficiency, and cost-effectiveness. These power ICs come in both 'half-bridge' and 'single' forms, finding application in diverse sectors such as fast chargers, renewables, data centers, and electric mobility. Notably, U.S. companies are actively enhancing their power IC solutions, particularly for the automotive and telecom sectors, thereby propelling the expansion of this market segment. For instance, in March 2023, Efficient Power Conversion Corporation introduced two 100 V power stage ICs, rated at 25 A (EPC23103) and 15 A (EPC23104), specifically designed for motor drives, DC-DC applications, and Class-D audio amplifiers.
Concurrently, the rectifier segment is anticipated to experience the most rapid growth in the market throughout the forecast period. GaN rectifiers are extensively employed for their capability to withstand high-temperature environments. This characteristic makes them particularly valuable in various consumer electronics and military & aerospace applications. Furthermore, their compact size positions GaN rectifiers as a preferred choice for a majority of consumer electronics manufacturers over traditional silicon (Si) rectifiers.
In 2023, the 4-inch wafer segment claimed the largest share of revenue in the market. The increasing adoption of 4-inch wafers in the U.S. semiconductor industry is notable, as they address limitations associated with 2-inch wafers. Moreover, the cost-effectiveness of producing these wafers on a larger scale has contributed to their prominence. Recent advancements in segments like optoelectronics devices, high-power amplifiers, and high-temperature devices have spurred a heightened demand for GaN devices utilizing 4-inch wafers. Particularly, these wafers are well-suited for wideband GaN power amplifiers integral to software-defined radios, defining the substantial growth observed in this segment.
Conversely, the 8-inch wafer segment is poised to exhibit the fastest Compound Annual Growth Rate (CAGR) through 2033. Designed to dynamically supply high-watt GaN for GaN-on-silicon transistors and other electronic peripherals, 8-inch wafers play a crucial role in reducing parasitic capacitance by up to 90%. This makes them a preferred choice in power electronics and compound semiconductor devices, ensuring enhanced productivity and precise process control compared to 4- and 6-inch wafers. Devices manufactured using 8-inch wafers find application in various automotive components such as radios, music systems, V2V communication systems, in-vehicle smartphone chargers, and interior lighting systems. The continuous expansion of the U.S. automotive industry, driven by technological advancements, serves as a significant driver for the notable growth in this segment.
In 2023, the Information & Communication Technology (ICT) segment emerged as the leader in revenue share within the market. This prominence is largely attributed to the rapid expansion of 5G infrastructure in the U.S., facilitated by supportive government initiatives and the presence of major telecom service providers like AT&T, Verizon, and T-Mobile. GaN semiconductor devices are pivotal in this sector due to their high breakdown voltage, thermal stability, and electron mobility, making them well-suited for deployment. Furthermore, GaN devices contribute to improved 5G base station performance by reducing equipment weight and size, enhancing overall energy efficiency. Key industry players such as Qorvo, NXP Semiconductors, and Infineon Technologies have introduced innovative products, playing a crucial role in expanding the market within the ICT segment.
Concurrently, the defense and aerospace segment is poised to witness the fastest growth rate through 2033, propelled by substantial investments from the U.S. government in upgrading the nation's defense infrastructure. GaN technology's advantages, including higher frequency bandwidth, transmit power, and efficiency within a smaller footprint, have driven its adoption in next-generation electronic warfare, radar, and communication systems. Government grants allocated to defense organizations have further stimulated growth in this sector. An illustrative example is the microelectronics center of BAE Systems in New Hampshire, which received a USD 35 million grant from the Department of Commerce in December 2023 to enhance its GaN capabilities.
By Product
By Component
By Wafer Size
By End-use
Chapter 1. Introduction
1.1. Research Objective
1.2. Scope of the Study
1.3. Definition
Chapter 2. Research Methodology
2.1. Research Approach
2.2. Data Sources
2.3. Assumptions & Limitations
Chapter 3. Executive Summary
3.1. Market Snapshot
Chapter 4. Market Variables and Scope
4.1. Introduction
4.2. Market Classification and Scope
4.3. Industry Value Chain Analysis
4.3.1. Raw Material Procurement Analysis
4.3.2. Sales and Distribution Channel Analysis
4.3.3. Downstream Buyer Analysis
Chapter 5. COVID 19 Impact on U.S. Gallium Nitride Semiconductor Devices Market
5.1. COVID-19 Landscape: U.S. Gallium Nitride Semiconductor Devices Industry Impact
5.2. COVID 19 - Impact Assessment for the Industry
5.3. COVID 19 Impact: Global Major Government Policy
5.4. Market Trends and Opportunities in the COVID-19 Landscape
Chapter 6. Market Dynamics Analysis and Trends
6.1. Market Dynamics
6.1.1. Market Drivers
6.1.2. Market Restraints
6.1.3. Market Opportunities
6.2. Porter’s Five Forces Analysis
6.2.1. Bargaining power of suppliers
6.2.2. Bargaining power of buyers
6.2.3. Threat of substitute
6.2.4. Threat of new entrants
6.2.5. Degree of competition
Chapter 7. Competitive Landscape
7.1.1. Company Market Share/Positioning Analysis
7.1.2. Key Strategies Adopted by Players
7.1.3. Vendor Landscape
7.1.3.1. List of Suppliers
7.1.3.2. List of Buyers
Chapter 8. U.S. Gallium Nitride Semiconductor Devices Market, By Product
8.1. U.S. Gallium Nitride Semiconductor Devices Market, by Product, 2024-2033
8.1.1. GaN Radio Frequency Devices
8.1.1.1. Market Revenue and Forecast (2021-2033)
8.1.2. Opto-semiconductors
8.1.2.1. Market Revenue and Forecast (2021-2033)
8.1.3. Power Semiconductors
8.1.3.1. Market Revenue and Forecast (2021-2033)
Chapter 9. U.S. Gallium Nitride Semiconductor Devices Market, By Component
9.1. U.S. Gallium Nitride Semiconductor Devices Market, by Component, 2024-2033
9.1.1. Transistor
9.1.1.1. Market Revenue and Forecast (2021-2033)
9.1.2. Diode
9.1.2.1. Market Revenue and Forecast (2021-2033)
9.1.3. Rectifier
9.1.3.1. Market Revenue and Forecast (2021-2033)
9.1.4. Power IC
9.1.4.1. Market Revenue and Forecast (2021-2033)
9.1.5. Others
9.1.5.1. Market Revenue and Forecast (2021-2033)
Chapter 10. U.S. Gallium Nitride Semiconductor Devices Market, By Wafer Size
10.1. U.S. Gallium Nitride Semiconductor Devices Market, by Wafer Size, 2024-2033
10.1.1. 2-inch
10.1.1.1. Market Revenue and Forecast (2021-2033)
10.1.2. 4-inch
10.1.2.1. Market Revenue and Forecast (2021-2033)
10.1.3. 6-inch
10.1.3.1. Market Revenue and Forecast (2021-2033)
10.1.4. 8-inch
10.1.4.1. Market Revenue and Forecast (2021-2033)
Chapter 11. U.S. Gallium Nitride Semiconductor Devices Market, By End-use
11.1. U.S. Gallium Nitride Semiconductor Devices Market, by End-use, 2024-2033
11.1.1. Automotive
11.1.1.1. Market Revenue and Forecast (2021-2033)
11.1.2. Consumer Electronics
11.1.2.1. Market Revenue and Forecast (2021-2033)
11.1.3. Defense & Aerospace
11.1.3.1. Market Revenue and Forecast (2021-2033)
11.1.4. Healthcare
11.1.4.1. Market Revenue and Forecast (2021-2033)
11.1.5. Industrial & Power
11.1.5.1. Market Revenue and Forecast (2021-2033)
11.1.6. Information & Communication Technology
11.1.6.1. Market Revenue and Forecast (2021-2033)
11.1.7. Others
11.1.7.1. Market Revenue and Forecast (2021-2033)
Chapter 12. U.S. Gallium Nitride Semiconductor Devices Market, Regional Estimates and Trend Forecast
12.1. U.S.
12.1.1. Market Revenue and Forecast, by Product (2021-2033)
12.1.2. Market Revenue and Forecast, by Component (2021-2033)
12.1.3. Market Revenue and Forecast, by Wafer Size (2021-2033)
12.1.4. Market Revenue and Forecast, by End-use (2021-2033)
Chapter 13. Company Profiles
13.1. Wolfspeed Inc. (formerly Cree, Inc.)
13.1.1. Company Overview
13.1.2. Product Offerings
13.1.3. Financial Performance
13.1.4. Recent Initiatives
13.2. Efficient Power Conversion Corporation
13.2.1. Company Overview
13.2.2. Product Offerings
13.2.3. Financial Performance
13.2.4. Recent Initiatives
13.3. Fujitsu Ltd.
13.3.1. Company Overview
13.3.2. Product Offerings
13.3.3. Financial Performance
13.3.4. Recent Initiatives
13.4. GaN Systems
13.4.1. Company Overview
13.4.2. Product Offerings
13.4.3. Financial Performance
13.4.4. Recent Initiatives
13.5. Infineon Technologies AG
13.5.1. Company Overview
13.5.2. Product Offerings
13.5.3. Financial Performance
13.5.4. Recent Initiatives
13.6. NexgenPowerSystems
13.6.1. Company Overview
13.6.2. Product Offerings
13.6.3. Financial Performance
13.6.4. Recent Initiatives
13.7. NXP Semiconductor
13.7.1. Company Overview
13.7.2. Product Offerings
13.7.3. Financial Performance
13.7.4. Recent Initiatives
13.8. Qorvo, Inc.
13.8.1. Company Overview
13.8.2. Product Offerings
13.8.3. Financial Performance
13.8.4. Recent Initiatives
13.9. Texas Instruments Incorporated
13.9.1. Company Overview
13.9.2. Product Offerings
13.9.3. Financial Performance
13.9.4. Recent Initiatives
13.10. Toshiba Corporation
13.10.1. Company Overview
13.10.2. Product Offerings
13.10.3. Financial Performance
13.10.4. Recent Initiatives
Chapter 14. Research Methodology
14.1. Primary Research
14.2. Secondary Research
14.3. Assumptions
Chapter 15. Appendix
15.1. About Us
15.2. Glossary of Terms